?2005 fairchild semiconductor corporation 1 www.fairchildsemi.com fqP11N50CF/fqpf11n50cf rev. a fqP11N50CF/fqpf11n50cf 500v n-channel mosfet frfet tm july 2005 fqP11N50CF/fqpf11n50cf 500v n-channel mosfet features ? 11a, 500v, r ds(on) = 0.55 ? @v gs = 10 v ? low gate charge (typical 43 nc) ? low crss (typical 20pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? fast recovery body diode (typical 90ns) description these n-channel enhancement mode power field effect transis- tors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high effi- ciency switched mode power supplies, active power factor cor- rection, electronic lamp ballasts based on half bridge topology. absolute maximum ratings * drain current limited by maximum junction temperature thermal characteristics to-220 fqp series g s d to-220f fqpf series g s d { { { { { { { { { { { { ? ? ? ? { { { { { { { { { { { { ? ? ? ? s d g symbol parameter fqP11N50CF fqpf11n50cf units v dss drain-source voltage 500 v i d drain current - continuous (t c = 25c) 11 11 * a - continuous (t c = 100c) 7 7 * a i dm drain current - pulsed (note 1) 44 44 * a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 670 mj i ar avalanche current (note 1) 11 a e ar repetitive avalanche energy (note 1) 19.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25c) 195 48 w - derate above 25c 1.56 0.39 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter fqP11N50CF fqpf11n50cf units r jc thermal resistance, junction-to-case 0.64 2.58 c / w r js thermal resistance, case-to-sink typ. 0.5 -- c / w r ja thermal resistance, junction-to-ambient 62.5 62.5 c / w free datasheet http://
2 www.fairchildsemi.com fqP11N50CF/fqpf11n50cf rev. a fqP11N50CF/fqpf11n50cf 500v n-channel mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 10mh, i as = 11a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 11a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature device marking device package reel size tape width quantity fqP11N50CF fqP11N50CF to-220 -- -- 50 fqpf11n50cf fqpf11n50cf to-220f -- -- 50 symbol parameter test conditions min. typ. max. units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 500 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.5 -- v/c i dss zero gate voltage drain current v ds = 500 v, v gs = 0 v -- -- 10 a v ds = 400 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a2.0--4.0v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 5.5 a -- 0.48 0.55 ? g fs forward transconductance v ds = 40 v, i d = 5.5 a (note 4) -- 15 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 1515 2055 pf c oss output capacitance -- 185 235 pf c rss reverse transfer capacitance -- 25 30 pf switching characteristics t d(on) turn-on delay time v dd = 250 v, i d = 11 a, r g = 25 ? (note 4, 5) -- 24 57 ns t r turn-on rise time -- 70 150 ns t d(off) turn-off delay time -- 120 250 ns t f turn-off fall time -- 75 160 ns q g total gate charge v ds = 400 v, i d = 11a, v gs = 10 v (note 4, 5) -- 43 55 nc q gs gate-source charge -- 8 -- nc q gd gate-drain charge -- 19 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 11 a i sm maximum pulsed drain-source diode forward current -- -- 44 a v sd drain-source diode forward voltage v gs = 0 v, i s = 11 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 11 a, di f / dt = 100 a/ s (note 4) -- 90 -- ns q rr reverse recovery charge -- 1.5 -- c free datasheet http://
3 www.fairchildsemi.com fqP11N50CF/fqpf11n50cf rev. a fqP11N50CF/fqpf11n50cf 500v n-channel mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage variation vs. source current and temperatue figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 4.5 v * notes : 1. 250 s pulse test 2. t c = 25 c i d , drain current [a] v ds , drain-source voltage [v] 2 4 6 8 10 12 10 0 10 1 150 c 25 c -55 c * notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 25 30 35 40 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v gs = 20v v gs = 10v * note : t j = 25 c r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 10 1 25 c 150 c * notes : 1. v gs = 0v 2. 250 s pulse test i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 1000 2000 3000 4000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0 1020304050 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v * note : i d = 11a v gs , gate-source voltage [v] q g , total gate charge [nc] free datasheet http://
4 www.fairchildsemi.com fqP11N50CF/fqpf11n50cf rev. a fqP11N50CF/fqpf11n50cf 500v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9-1. maximum safe operating area figure 9-2. maximum safe operating area for fqP11N50CF for fqpf11n50cf figure 10. maximum drain current vs. case temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 5.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 2 4 6 8 10 12 i d , drain current [a] t j , junction temperature [ o c] free datasheet http://
5 www.fairchildsemi.com fqP11N50CF/fqpf11n50cf rev. a fqP11N50CF/fqpf11n50cf 500v n-channel mosfet typical performance characteristics (continued) figure 11-1. transient thermal response curve for fqP11N50CF figure 11-2. transient thermal response curve for fqpf11n50cf 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1 . z jc (t) = 0.64 o c/w max. 2 . d uty f a ctor, d = t 1 /t 2 3 . t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , s quare w ave p ulse d uration [sec] t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * n otes : 1 . z jc (t) = 2.58 o c/w max. 2 . d u ty f a cto r, d = t 1 /t 2 3 . t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , s q u are w a ve p u lse d ura tion [sec] t 1 p dm t 2 free datasheet http://
6 www.fairchildsemi.com fqP11N50CF/fqpf11n50cf rev. a fqP11N50CF/fqpf11n50cf 500v n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d( on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d( on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p free datasheet http://
7 www.fairchildsemi.com fqP11N50CF/fqpf11n50cf rev. a fqP11N50CF/fqpf11n50cf 500v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- free datasheet http://
8 www.fairchildsemi.com fqP11N50CF/fqpf11n50cf rev. a fqP11N50CF/fqpf11n50cf 500v n-channel mosfet mechanical dimensions 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?.05 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 dimensions in millimeters free datasheet http://
9 www.fairchildsemi.com fqP11N50CF/fqpf11n50cf rev. a fqP11N50CF/fqpf11n50cf 500v n-channel mosfet mechanical dimensions (continued) (7.00) (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 3.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 0.05 to-220f dimensions in millimeters free datasheet http://
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intend ed to be an exhaustive list of all such trademarks. fqP11N50CF/fqpf11n50cf 500v n-channel mosfet disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? unifet? vcx? wire? acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? across the board. around the world.? the power franchise ? programmable active droop? rev. i16 10 www.fairchildsemi.com fqP11N50CF/fqpf11n50cf rev. a fqP11N50CF/fqpf11n50cf 500v n-channel mosfet free datasheet http://
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